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ST-PDA150000-Si2

Products / Light Analysis /Photodetectors /Photodiode Detector （PD） (5-1700nm) /Low-noise Amplified Photodetector / ST-PDA150000-Si2 /

Wavelength:300-1060 nm nm;Peak Responsivity: 0.57A/W @ 800 nm;Effective Area:D = 0.8mm, S = 0.5 mm^2;Rise Time:2.3ns;Bandwidth:150MHz;Gain at 50 Ω Load:0.1 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):23.6;Output Voltage:0~-4 V

MODEL:ST-PDA150000-Si2

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* The prices are indicative only. Please contact us for an official quote. This is single product page, for detail specification please refer to product main page


Related Products Detailed Introduction
Compare Model Drawings & Specs Availability Reference Price
ST-PDA000200-InGaAs0
Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:1.4us;Bandwidth:271KHz;Gain at 50 Ω Load:56.3 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):7.87;Output Voltage:0~-4 V 		Contact us Request for quote
ST-PDA002000-InGaAs0
Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:145 ns;Bandwidth:2.61MHz;Gain at 50 Ω Load:5.85 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):8.71;Output Voltage:0~-4 V 		Contact us Request for quote
ST-PDA020000-InGaAs0
Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:18 ns;Bandwidth:21.2 MHz;Gain at 50 Ω Load:0.72 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):7.9;Output Voltage:0~-4 V 		Contact us Request for quote
ST-PDA150000-InGaAs0
Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:2.3 ns;Bandwidth:150 MHz;Gain at 50 Ω Load:0.1 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):23.6;Output Voltage:0~-4 V 		Contact us Request for quote
ST-PDAVG-InGaAs0
Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:2ns-250us;Bandwidth:200 MHz-1.52 kHz;Gain at 50 Ω Load:19.08 V/A-10 MV/A;Noise-Equivalent Power (NEP) (pW/√Hz):47.12-8.34;Output Voltage:0~-4V 		Contact us Request for quote
ST-PDA000200-Si2
Wavelength:300-1060 nm nm;Peak Responsivity: 0.57A/W @ 800 nm;Effective Area:D = 0.8 mm, S = 0.5 mm^2;Rise Time:1.4us;Bandwidth:271KHz;Gain at 50 Ω Load:56.3 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):7.87;Output Voltage:0~-4 V 		Contact us Request for quote
ST-PDA002000-Si2
Wavelength:300-1060 nm0 nm;Peak Responsivity: 0.57A/W @ 800 nm;Effective Area:D = 0.8 mm, S = 0.5 mm^2;Rise Time:145ns;Bandwidth:2.61MHz;Gain at 50 Ω Load:5.85 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):8.71;Output Voltage:0~-4 V 		Contact us Request for quote
ST-PDA020000-Si2
Wavelength:300-1060 nm nm;Peak Responsivity: 0.57A/W @800 nm;Effective Area:D =0.8 mm, S = 0.5 mm^2;Rise Time:18ns;Bandwidth:21.2MHz;Gain at 50 Ω Load:0.72 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):7.9;Output Voltage:0~-4 V 		Contact us Request for quote
ST-PDAVG-Si2
Wavelength:300-1060 nm;Peak Responsivity: 0.57A/W @800 nm;Effective Area:D = 0.8*0.8 mm, Rise Time:2ns-250us;Bandwidth:200 MHz-1.52 kHz;Gain at 50 Ω Load:19.08 V/A-10 MV/A;Noise-Equivalent Power (NEP) (pW/√Hz):47.12-8.34;Output Voltage:0~-4 V 		Contact us Request for quote
LA-CQ01-PR-2G-B
LA-CQ01-PR-2G-B，Wavelength range：400-1100 nm，3dB bandwidth：50K-2 GHz，Photosensitive surface：150 um，Gain：200 V/W，NEP：250 pw∕Hz^1∕2，Saturation power：5dBm 		4-6week $1121.21
LA-CQ01-PR-2G-A
LA-CQ01-PR-2G-A，Wavelength range：800-1700 nm，3dB bandwidth：50K-2 GHz，Photosensitive surface：75 um Gain：1×10^3 V/W，NEP：50 pw∕Hz^1∕2，Saturation power：2dBm 		4-6week $1121.21
LA-CQ01-PR-1G-B
LA-CQ01-PR-1G-B，Wavelength range：320-1000 nm，3dB bandwidth：50K-1 GHz，Photosensitive surface：400 um，Gain：500 V/W，NEP：100 pw∕Hz^1∕2，Saturation power：5dBm 		4-6week $961.04
LA-CQ01-PR-1G-A
LA-CQ01-PR-1G-A，Wavelength range：900-1700 nm，3dB bandwidth：50K-1 GHz，Photosensitive surface：75 um，Gain：1×10^3 V/W，NEP：50 pw∕Hz^1∕2，Saturation power：2dBm 		4-6week $961.04
LA-CQ01-PR-500M-B
LA-CQ01-PR-500M-B，Wavelength range：320-1000 nm，3dB bandwidth：DC-500 MHz，Photosensitive surface：400 um，Gain：0.8×10^3 V/W，NEP：11.2 pw∕Hz^1∕2，Saturation power：3dBm 		4-6week $800.86
LA-CQ01-PR-500M-A
LA-CQ01-PR-500M-A，Wavelength range：900-1700 nm，3dB bandwidth：DC-500 MHz，Photosensitive surface：75um，Gain：1.5×10^3 V/W，NEP：6 pw∕Hz^1∕2，Saturation power：0dBm 		4-6week $800.86
LA-CQ01-PR-200M-B
LA-CQ01-PR-200M-B，Wavelength range：320-1000 nm，3dB bandwidth：DC-200 MHz，Photosensitive surface：800um，Gain：9×10^3 V/W，NEP：28 pw∕Hz^1∕2，Saturation power：-5dBm 		4-6week $720.78
LA-CQ01-PR-200M-A
LA-CQ01-PR-200M-A，Wavelength range：900-1700 nm，3dB bandwidth：DC-200 MHz，Photosensitive surface：75um，Gain：1.8×10^4 V/W，NEP：14 pw∕Hz^1∕2，Saturation power：-8dBm 		4-6week $720.78
LA-CQ01-PR-10M-B
LA-CQ01-PR-10M-B，Wavelength range：320-1000 nm，3dB bandwidth：DC-10MHz，Photosensitive surface：1.2mm，Gain：1×10^5 V/W，NEP：22 pw∕Hz^1∕2，Saturation power：-12dBm 		4-6week $640.69
LA-CQ01-PR-10M-A
LA-CQ01-PR-10M-A,Wavelength range：900-1700 nm，3dB bandwidth：DC-10MHz，Photosensitive surface：75um，Gain：2×10^5 V/W，NEP：11 pw∕Hz^1∕2，Saturation power：-15dBm 		4-6week $640.69
LA-CQ01-PR-200K-B
LA-CQ01-PR-200K-B,Wavelength range：320-1000nm，3dB bandwidth：DC-200 KHz，Photosensitive surface：1.2mm，Gain：2.5×10^6 V/W，NEP： 9pw∕Hz^1∕2，Saturation power：-27dBm 		4-6week $640.69
LA-CQ01-PR-200K-A
LA-CQ01-PR-200K-A，Wavelength range：900-1700 nm，3dB bandwidth：DC-200 KHz，Photosensitive surface：75 um，Gain：5×10^6 V/W，NEP：4.5 pw∕Hz^1∕2，Saturation power：-30dBm 		4-6week $640.69

Compatible

Compare Model Drawings & Specs Availability Reference Price

Product Model

ST-PDA150000-
InGaAs0

ST-PDA020000-
InGaAs0

ST-PDA002000-
InGaAs0

ST-PDA000200-
InGaAs0

ST-PDAVG-InGaAs0
(Adjustable Gain)

Wavelength
300-1060 nm

300-1060 nm

300-1060 nm

300-1060 nm

300-1060 nm

Peak Responsivity

0.57A/W @ 800 nm

0.57A/W @ 800 nm

0.57A/W @800nm

0.57A/W @800 nm

0.57A/W @ 800 nm

Effective Area

D = 1 mm,S = 0.5 mm^2

D = 1 mm,S = 0.5 mm^2

D = 1 mm,S = 0.5 mm^2

D = 1 mm,S = 0.5 mm^2

D = 1 mm,S = 0.5 mm^2

Rise Time

2.3 ns

18ns

145ns

1.4us

2ns-250us

Bandwidth

150 MHz

21.2MHz

2.61MHz

271KHz

200 MHz-1.52 kHz

Gain at 50 Ω Load

0.1 kV/A

0.72kV/A

5.85kV/A

56.3kV/A

19.08 V/A-10 MV/A

Noise-Equivalent Power(NEP)pW√Hz

23.6

7.9

8.71

7.87

47.12-8.34

Output Voltage

0~-4 V

0~-4 V

0~-4 V

0~-4 V

0~-4 V




ST-PDA000200-InGaAs0 - Parameter

ST-PDA002000-InGaAs0 - Parameter

ST-PDA020000-InGaAs0 - Parameter

ST-PDA150000-InGaAs0 - Parameter

ST-PDAVG-InGaAs0 - Parameter

ST-PDA000200-Si2 - Parameter

ST-PDA002000-Si2 - Parameter

ST-PDA020000-Si2 - Parameter

ST-PDA150000-Si2 - Parameter

ST-PDAVG-Si2 - Parameter

LA-CQ01-PR-2G-B - Parameter

LA-CQ01-PR-2G-A - Parameter

LA-CQ01-PR-1G-B - Parameter

LA-CQ01-PR-1G-A - Parameter

LA-CQ01-PR-500M-B - Parameter

LA-CQ01-PR-500M-A - Parameter

LA-CQ01-PR-200M-B - Parameter

LA-CQ01-PR-200M-A - Parameter

LA-CQ01-PR-10M-B - Parameter

LA-CQ01-PR-10M-A - Parameter

LA-CQ01-PR-200K-B - Parameter

LA-CQ01-PR-200K-A - Parameter

ST-PDA000200-InGaAs0 - Download

ST-PDA002000-InGaAs0 - Download

ST-PDA020000-InGaAs0 - Download

ST-PDA150000-InGaAs0 - Download

ST-PDAVG-InGaAs0 - Download

ST-PDA000200-Si2 - Download

ST-PDA002000-Si2 - Download

ST-PDA020000-Si2 - Download

ST-PDA150000-Si2 - Download

ST-PDAVG-Si2 - Download

LA-CQ01-PR-2G-B - Download

LA-CQ01-PR-2G-A - Download

LA-CQ01-PR-1G-B - Download

LA-CQ01-PR-1G-A - Download

LA-CQ01-PR-500M-B - Download

LA-CQ01-PR-500M-A - Download

LA-CQ01-PR-200M-B - Download

LA-CQ01-PR-200M-A - Download

LA-CQ01-PR-10M-B - Download

LA-CQ01-PR-10M-A - Download

LA-CQ01-PR-200K-B - Download

LA-CQ01-PR-200K-A - Download

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