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Products / Light Analysis /Photodetectors /Photodiode Detector （PD） (5-1700nm) /Low-noise Amplified Photodetector / LA-CQ01-PR-1G-B /

LA-CQ01-PR-1G-B，Wavelength range：320-1000 nm，3dB bandwidth：50K-1 GHz，Photosensitive surface：400 um，Gain：500 V/W，NEP：100 pw∕Hz^1∕2，Saturation power：5dBm

MODEL:LA-CQ01-PR-1G-B

$961.04 4-6week Drawings

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* The prices are indicative only. Please contact us for an official quote. This is single product page, for detail specification please refer to product main page

Related Products Detailed Introduction

	Availability	Reference Price
ST-PDA000200-InGaAs0 Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:1.4us;Bandwidth:271KHz;Gain at 50 Ω Load:56.3 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):7.87;Output Voltage:0~-4 V	Contact us	Request for quote
ST-PDA002000-InGaAs0 Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:145 ns;Bandwidth:2.61MHz;Gain at 50 Ω Load:5.85 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):8.71;Output Voltage:0~-4 V	Contact us	Request for quote
ST-PDA020000-InGaAs0 Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:18 ns;Bandwidth:21.2 MHz;Gain at 50 Ω Load:0.72 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):7.9;Output Voltage:0~-4 V	Contact us	Request for quote
ST-PDA150000-InGaAs0 Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:2.3 ns;Bandwidth:150 MHz;Gain at 50 Ω Load:0.1 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):23.6;Output Voltage:0~-4 V	Contact us	Request for quote
ST-PDAVG-InGaAs0 Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:2ns-250us;Bandwidth:200 MHz-1.52 kHz;Gain at 50 Ω Load:19.08 V/A-10 MV/A;Noise-Equivalent Power (NEP) (pW/√Hz):47.12-8.34;Output Voltage:0~-4V	Contact us	Request for quote
ST-PDA000200-Si2 Wavelength:300-1060 nm nm;Peak Responsivity: 0.57A/W @ 800 nm;Effective Area:D = 0.8 mm, S = 0.5 mm^2;Rise Time:1.4us;Bandwidth:271KHz;Gain at 50 Ω Load:56.3 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):7.87;Output Voltage:0~-4 V	Contact us	Request for quote
ST-PDA002000-Si2 Wavelength:300-1060 nm0 nm;Peak Responsivity: 0.57A/W @ 800 nm;Effective Area:D = 0.8 mm, S = 0.5 mm^2;Rise Time:145ns;Bandwidth:2.61MHz;Gain at 50 Ω Load:5.85 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):8.71;Output Voltage:0~-4 V	Contact us	Request for quote
ST-PDA020000-Si2 Wavelength:300-1060 nm nm;Peak Responsivity: 0.57A/W @800 nm;Effective Area:D =0.8 mm, S = 0.5 mm^2;Rise Time:18ns;Bandwidth:21.2MHz;Gain at 50 Ω Load:0.72 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):7.9;Output Voltage:0~-4 V	Contact us	Request for quote
ST-PDA150000-Si2 Wavelength:300-1060 nm nm;Peak Responsivity: 0.57A/W @ 800 nm;Effective Area:D = 0.8mm, S = 0.5 mm^2;Rise Time:2.3ns;Bandwidth:150MHz;Gain at 50 Ω Load:0.1 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):23.6;Output Voltage:0~-4 V	Contact us	Request for quote
ST-PDAVG-Si2 Wavelength:300-1060 nm;Peak Responsivity: 0.57A/W @800 nm;Effective Area:D = 0.8*0.8 mm, Rise Time:2ns-250us;Bandwidth:200 MHz-1.52 kHz;Gain at 50 Ω Load:19.08 V/A-10 MV/A;Noise-Equivalent Power (NEP) (pW/√Hz):47.12-8.34;Output Voltage:0~-4 V	Contact us	Request for quote
LA-CQ01-PR-2G-B LA-CQ01-PR-2G-B，Wavelength range：400-1100 nm，3dB bandwidth：50K-2 GHz，Photosensitive surface：150 um，Gain：200 V/W，NEP：250 pw∕Hz^1∕2，Saturation power：5dBm	4-6week	$1121.21
LA-CQ01-PR-2G-A LA-CQ01-PR-2G-A，Wavelength range：800-1700 nm，3dB bandwidth：50K-2 GHz，Photosensitive surface：75 um Gain：1×10^3 V/W，NEP：50 pw∕Hz^1∕2，Saturation power：2dBm	4-6week	$1121.21
LA-CQ01-PR-1G-A LA-CQ01-PR-1G-A，Wavelength range：900-1700 nm，3dB bandwidth：50K-1 GHz，Photosensitive surface：75 um，Gain：1×10^3 V/W，NEP：50 pw∕Hz^1∕2，Saturation power：2dBm	4-6week	$961.04
LA-CQ01-PR-500M-B LA-CQ01-PR-500M-B，Wavelength range：320-1000 nm，3dB bandwidth：DC-500 MHz，Photosensitive surface：400 um，Gain：0.8×10^3 V/W，NEP：11.2 pw∕Hz^1∕2，Saturation power：3dBm	4-6week	$800.86
LA-CQ01-PR-500M-A LA-CQ01-PR-500M-A，Wavelength range：900-1700 nm，3dB bandwidth：DC-500 MHz，Photosensitive surface：75um，Gain：1.5×10^3 V/W，NEP：6 pw∕Hz^1∕2，Saturation power：0dBm	4-6week	$800.86
LA-CQ01-PR-200M-B LA-CQ01-PR-200M-B，Wavelength range：320-1000 nm，3dB bandwidth：DC-200 MHz，Photosensitive surface：800um，Gain：9×10^3 V/W，NEP：28 pw∕Hz^1∕2，Saturation power：-5dBm	4-6week	$720.78
LA-CQ01-PR-200M-A LA-CQ01-PR-200M-A，Wavelength range：900-1700 nm，3dB bandwidth：DC-200 MHz，Photosensitive surface：75um，Gain：1.8×10^4 V/W，NEP：14 pw∕Hz^1∕2，Saturation power：-8dBm	4-6week	$720.78
LA-CQ01-PR-10M-B LA-CQ01-PR-10M-B，Wavelength range：320-1000 nm，3dB bandwidth：DC-10MHz，Photosensitive surface：1.2mm，Gain：1×10^5 V/W，NEP：22 pw∕Hz^1∕2，Saturation power：-12dBm	4-6week	$640.69
LA-CQ01-PR-10M-A LA-CQ01-PR-10M-A,Wavelength range：900-1700 nm，3dB bandwidth：DC-10MHz，Photosensitive surface：75um，Gain：2×10^5 V/W，NEP：11 pw∕Hz^1∕2，Saturation power：-15dBm	4-6week	$640.69
LA-CQ01-PR-200K-B LA-CQ01-PR-200K-B,Wavelength range：320-1000nm，3dB bandwidth：DC-200 KHz，Photosensitive surface：1.2mm，Gain：2.5×10^6 V/W，NEP： 9pw∕Hz^1∕2，Saturation power：-27dBm	4-6week	$640.69
LA-CQ01-PR-200K-A LA-CQ01-PR-200K-A，Wavelength range：900-1700 nm，3dB bandwidth：DC-200 KHz，Photosensitive surface：75 um，Gain：5×10^6 V/W，NEP：4.5 pw∕Hz^1∕2，Saturation power：-30dBm	4-6week	$640.69

Compatible

Compare	Model		Drawings & Specs	Availability	Reference Price

General parameters

Model	Wavelength range	3dB bandwidth	Photosensitive surface	Gain (V/W)	NEP (pw/Hz1/2)	Saturation power	Output Signal
Model	Wavelength range	3dB bandwidth	Photosensitive surface	Gain (V/W)	NEP (pw/Hz1/2)	Saturation power	Output Signal
LA-CQ01-PR-200K-A	900-1700nm	DC-200KHz	75µm	5×10^6	4.5	-30dBm	0~7V
LA-CQ01-PR-200K-B	320-1000nm	DC-200KHz	1.2mm	2.5×10^6	9	-27dBm	0~7V
LA-CQ01-PR-10M-A	900-1700nm	DC-10MHz	75µm	2×10^5	11	-15dBm	0~7V
LA-CQ01-PR-10M-B	320-1000nm	DC-10MHz	1.2mm	1×10^5	22	-12dBm	0~7V
LA-CQ01-PR-200M-A	900-1700nm	DC-200MHz	75µm	1.8×10^4	14	-8dBm	0~3.7V
LA-CQ01-PR-200M-B	320-1000nm	DC-200MHz	800µm	9×10^3	28	-5dBm	0~3.7V
LA-CQ01-PR-500M-A	900-1700nm	DC-500MHz	75µm	1.5×10^3	6	0dBm	0~2.8V
LA-CQ01-PR-500M-B	320-1000nm	DC-500MHz	400µm	0.8×10^3	11.2	3dBm	0~2.8V
LA-CQ01-PR-1G-A	900-1700nm	50K-1GHz	75µm	1×10^3	50	2dBm	0~2Vpp
LA-CQ01-PR-1G-B	320-1000nm	50K-1GHz	400µm	500	100	5dBm	0~2Vpp
LA-CQ01-PR-2G-A	800-1700nm	50K-2GHz	75µm	1×10^3	50	2dBm	0~2Vpp
LA-CQ01-PR-2G-B	400-1100nm	50K-2GHz	150µm	200	250	5dBm	0~2Vpp

ST-PDA000200-InGaAs0 - Parameter

ST-PDA002000-InGaAs0 - Parameter

ST-PDA020000-InGaAs0 - Parameter

ST-PDA150000-InGaAs0 - Parameter

ST-PDAVG-InGaAs0 - Parameter

ST-PDA000200-Si2 - Parameter

ST-PDA002000-Si2 - Parameter

ST-PDA020000-Si2 - Parameter

ST-PDA150000-Si2 - Parameter

ST-PDAVG-Si2 - Parameter

LA-CQ01-PR-2G-B - Parameter

LA-CQ01-PR-2G-A - Parameter

LA-CQ01-PR-1G-B - Parameter

LA-CQ01-PR-1G-A - Parameter

LA-CQ01-PR-500M-B - Parameter

LA-CQ01-PR-500M-A - Parameter

LA-CQ01-PR-200M-B - Parameter

LA-CQ01-PR-200M-A - Parameter

LA-CQ01-PR-10M-B - Parameter

LA-CQ01-PR-10M-A - Parameter

LA-CQ01-PR-200K-B - Parameter

LA-CQ01-PR-200K-A - Parameter

ST-PDA000200-InGaAs0 - Download

ST-PDA002000-InGaAs0 - Download

ST-PDA020000-InGaAs0 - Download

ST-PDA150000-InGaAs0 - Download

ST-PDAVG-InGaAs0 - Download

ST-PDA000200-Si2 - Download

ST-PDA002000-Si2 - Download

ST-PDA020000-Si2 - Download

ST-PDA150000-Si2 - Download

ST-PDAVG-Si2 - Download

LA-CQ01-PR-2G-B - Download

LA-CQ01-PR-2G-A - Download

LA-CQ01-PR-1G-B - Download

LA-CQ01-PR-1G-A - Download

LA-CQ01-PR-500M-B - Download

LA-CQ01-PR-500M-A - Download

LA-CQ01-PR-200M-B - Download

LA-CQ01-PR-200M-A - Download

LA-CQ01-PR-10M-B - Download

LA-CQ01-PR-10M-A - Download

LA-CQ01-PR-200K-B - Download

LA-CQ01-PR-200K-A - Download

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